Paper
1 July 1991 Optimization of grating depth and layer thicknesses for DFB lasers
Ching Long Jiang, Rajiv Agarwal, Hide Kuwamoto, Rong-Ting Huang, Ami Appelbaum, Daniel S. Renner, Chin B. Su
Author Affiliations +
Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43817
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Abstract
The novel concept of K-stabilizing layer is reported for the first time. The coupling coefficient (K) which determines the characteristics of distributed feedback laser diodes (DFB LDs) has been controlled by optimizing the grating depth and layer thicknesses. The coupling coefficient is less dependent on the variations of grating depth and layer thicknesses if an optimized K- stabilizing layer (lower index material like InP) is inserted between the active layer and the guide layer. The controllability of the coupling coefficient has been demonstrated by the standard deviation of the lasing wavelength and the threshold current across a wafer, 0.74 nm and 2.67 mA, respectively.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ching Long Jiang, Rajiv Agarwal, Hide Kuwamoto, Rong-Ting Huang, Ami Appelbaum, Daniel S. Renner, and Chin B. Su "Optimization of grating depth and layer thicknesses for DFB lasers", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); https://doi.org/10.1117/12.43817
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KEYWORDS
Semiconductor lasers

Semiconducting wafers

Etching

Laser applications

Analog electronics

Fiber lasers

Liquid phase epitaxy

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