1 July 1991 Predicting diode laser performance
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Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43800
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Abstract
Predictions of the threshold current density of GaAs/AlGaAs graded refractive index (GRIN), separate confinement heterostructure (SCH), single potential well (SW) diode lasers at 25 degree(s)C and 125 degree(s)C using strict k-selection theory are made. A reasonable fit to the experimental data at both temperatures can be obtained without including carrier scattering. It is concluded that good predictions of threshold current density and differential quantum efficiency can be made provided one knows how to predict the temperature dependence of internal quantum efficiency.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Lim, Youngsoh Park, C. A. Zmudzinski, Peter S. Zory, L. M. Miller, Timothy M. Cockerill, James J. Coleman, Chi-Shain Hong, Luis Figueroa, "Predicting diode laser performance", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43800; https://doi.org/10.1117/12.43800
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