Vertical-cavity surface-emitters for optoelectronic integration

Randall S. Geels; Scott W. Corzine; Larry A. Coldren

doi:10.1117/12.43793

1 July 1991 Vertical-cavity surface-emitters for optoelectronic integration

Randall S. Geels, Scott W. Corzine, Larry A. Coldren

Author Affiliations +

Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43793
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States

Abstract

Dramatic progress in surface-emitting lasers in the past year has generated a lot of excitement in this area. Recent results with strained-layer quantum-well lasers detailing low threshold current (0.6 mA) and narrow linewidth operation (85 MHz with a linewidth power product of 5 MHz(DOT)mW) are discussed. Theoretical analysis indicates the potential for increased power output without significant threshold increase.

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Randall S. Geels, Scott W. Corzine, and Larry A. Coldren "Vertical-cavity surface-emitters for optoelectronic integration", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43793; https://doi.org/10.1117/12.43793

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