Vertical-cavity surface-emitting semiconductor lasers: present status and future prospects

Marek Osinski

doi:10.1117/12.43790

1 July 1991 Vertical-cavity surface-emitting semiconductor lasers: present status and future prospects

Marek Osinski

Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43790
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States

Abstract

Dramatic progress in the development of high-quality vertical-cavity surface-emitting lasers (VC-SELs) has been achieved during the last couple of years, with very strong contributions made by U.S. researchers. In particular, new concepts of microlasers and resonant-periodic- gain devices have been proposed and implemented, and devices with strained-quantum-well active regions have been demonstrated. This paper reviews the present status and future prospects for (VC-SELs), with emphasis on recent developments in the U.S.

Citation Download Citation

Marek Osinski "Vertical-cavity surface-emitting semiconductor lasers: present status and future prospects", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); https://doi.org/10.1117/12.43790

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