Depth profiling resonance ionization mass spectrometry of electronic materials

Stephen W. Downey; A. B. Emerson

doi:10.1117/12.44227

1 July 1991 Depth profiling resonance ionization mass spectrometry of electronic materials

Stephen W. Downey, A. B. Emerson

Proceedings Volume 1435, Optical Methods for Ultrasensitive Detection and Analysis: Techniques and Applications; (1991) https://doi.org/10.1117/12.44227
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States

Abstract

Resonance ionization mass spectrometry (RIMS) of neutral atoms sputtered from semiconductors is used to provide quantitative information about the major and minor constituents. If the photoionization process is demonstrated to be saturated, RIMS signals can be related to the absolute concentrations of many elements in semiconductors such as Si and GaAs. RIMS signals are demonstrated to be nearly element-independent, that is, equal concentrations of impurities such as Be, Al, and Co in Si give equivalent signals. However, partitioning into various quantum states and velocities of sputtered atoms must be considered when comparing interelement signals on an absolute basis. Three- photon ionization is shown to be useful in reducing some background ionization effects and detecting high ionization potential non-metal elements.

Citation Download Citation

Stephen W. Downey and A. B. Emerson "Depth profiling resonance ionization mass spectrometry of electronic materials", Proc. SPIE 1435, Optical Methods for Ultrasensitive Detection and Analysis: Techniques and Applications, (1 July 1991); https://doi.org/10.1117/12.44227

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