1 July 1991 In-situ CARS detection of H2 in the CVD of Si3N4
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Proceedings Volume 1435, Optical Methods for Ultrasensitive Detection and Analysis: Techniques and Applications; (1991) https://doi.org/10.1117/12.44258
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Abstract
Silicon nitride (Si3N4) has been demonstrated to be an effective high temperature anti-oxidant, especially when deposited in its -ciysta1line form. UTRC has developed a pilot scale chemical vapor deposition (CVD) reactor capable of depositing cv-Si3N4 from ammonia (NH3) and silicon tetrafluoride (SiF4) at 1450 C. Coherent anti-Stokes Raman spectroscopy (CARS) has been applied to this reactor which has been fitted with line-of-sight optical access ports. Temperature and concentration measurements have been performed on gas phase species during the deposition of Si3N4. Based on the CARS detection of H2, the importance of high temperature surface (SiN4) catalyzed decomposition of NH3:
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen O. Hay, R. D. Veltri, W. Y. Lee, Ward C. Roman, "In-situ CARS detection of H2 in the CVD of Si3N4", Proc. SPIE 1435, Optical Methods for Ultrasensitive Detection and Analysis: Techniques and Applications, (1 July 1991); doi: 10.1117/12.44258; https://doi.org/10.1117/12.44258
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