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1 April 1991 Laser-induced thermal desorption studies of surface reaction kinetics
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Proceedings Volume 1437, Applied Spectroscopy in Material Science; (1991)
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Laser induced thermal desorption (LITD) has proven to be an effective probe of reaction kinetics on single-crystal surfaces. The ability of LITD techniques to measure adsorption, decomposition and desorption kinetics will be illustrated by studies of SiCl4 and (CH3CH2)2 SiH2 on Si(111)7X7. Silicon tetrachloride, SiCl4, is important in silicon epitaxial growth and diethylsilane, (CH3CH2)2 SiH2, is a promising candidate for silicon atomic layer epitaxy. The desorption products, sticking coefficients and decomposition and desorption kinetics measured by these LITD investigations are important for an understanding of silicon epitaxy by chemical vapor deposition.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven M. George, Peter A. Coon, P. Gupta, and M. L. Wise "Laser-induced thermal desorption studies of surface reaction kinetics", Proc. SPIE 1437, Applied Spectroscopy in Material Science, (1 April 1991);

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