1 November 1990 The effect of laser annealing on laser induced damage threshold
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A significant enhancement of the single shot Laser Induced Damage Threshold of CaF2 and fused silica and a moderate enhancement for GaAs and Al has been observed as the result of laser annealing using an excimer laser operating at 248 nm. This phenomenon is primarily attributed to a reduction of the residual surface roughness of the samples.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. C. Kerr, "The effect of laser annealing on laser induced damage threshold", Proc. SPIE 1438, Laser-Induced Damage in Optical Materials 1989, 14380G (1 November 1990); doi: 10.1117/12.2294425; https://doi.org/10.1117/12.2294425

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