A significant enhancement of the single shot Laser Induced Damage Threshold of CaF2 and fused silica and a moderate enhancement for GaAs and Al has been observed as the result of laser annealing using an excimer laser operating at 248 nm. This phenomenon is primarily attributed to a reduction of the residual surface roughness of the samples.
N. C. Kerr, N. C. Kerr,
"The effect of laser annealing on laser induced damage threshold", Proc. SPIE 1438, Laser-Induced Damage in Optical Materials 1989, 14380G (1 November 1990); doi: 10.1117/12.2294425; https://doi.org/10.1117/12.2294425