1 November 1990 The effect of laser annealing on laser induced damage threshold
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Abstract
A significant enhancement of the single shot Laser Induced Damage Threshold of CaF2 and fused silica and a moderate enhancement for GaAs and Al has been observed as the result of laser annealing using an excimer laser operating at 248 nm. This phenomenon is primarily attributed to a reduction of the residual surface roughness of the samples.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. C. Kerr, N. C. Kerr, } "The effect of laser annealing on laser induced damage threshold", Proc. SPIE 1438, Laser-Induced Damage in Optical Materials 1989, 14380G (1 November 1990); doi: 10.1117/12.2294425; https://doi.org/10.1117/12.2294425
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