1 November 1990 Photoconductivity of ZnS and ZnSe
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Abstract
ZnS and ZnSe are important materials for laser windows and optical thin- film coatings. Understanding the laser-induced damage mechanism in optical materials provides the ability to make improved damage-resistant materials. Photoconductivity (PC) techniques have demonstrated the capability to provide information on carrier production that can lead to electron avalanche by single or multiple photon absorption processes produced by a high-intensity laser beam. A study of the linear PC using a monochromated Xe lamp and the nonlinear PC using various lasers as excitation sources will be presented for chemically vapor-deposited ZnS and ZnSe.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. E. Mason, B. E. Mason, } "Photoconductivity of ZnS and ZnSe", Proc. SPIE 1438, Laser-Induced Damage in Optical Materials 1989, 14381M (1 November 1990); doi: 10.1117/12.2294467; https://doi.org/10.1117/12.2294467
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