1 December 1991 Anisotropic local melting of semiconductors under light pulse irradiation
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Proceedings Volume 1440, Optical Radiation Interaction with Matter; (1991) https://doi.org/10.1117/12.48130
Event: Optical Radiation Interaction with Matter, 1990, Leningrad, Russian Federation
This paper summarizes the careful investigation of the mechanism and basic regularities of anisotropic local melting of semiconductors subjected to light-pulse irradiation. The dependences of the density, sizes, and shapes of local motion regions on the intensity and duration of light pulses, the type of monocrystalline substrate, as well as the regime of preliminary implantation and ion type are established. The model of superheating in solid phase is used to explain the experimental results. It is shown that the main centers for liquid nuclei formation are the surface defects available before the light irradiation. The influence of the thermoplastic effects caused by both the light pulse itself and the tetrahedral covalent radius of implanted impurity is shown.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yakh'ya V. Fattakhov, Yakh'ya V. Fattakhov, Il'dus B. Khaibullin, Il'dus B. Khaibullin, Rustem M.D. Bayazitov, Rustem M.D. Bayazitov, "Anisotropic local melting of semiconductors under light pulse irradiation", Proc. SPIE 1440, Optical Radiation Interaction with Matter, (1 December 1991); doi: 10.1117/12.48130; https://doi.org/10.1117/12.48130

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