Double-resonant tunneling via surface plasmons in a metal-semiconductor system

Olga M. Sreseli; Ludvig V. Belyakov; D. N. Goryachev; B. L. Rumyantsev; Ilya D. Yaroshetskii

doi:10.1117/12.48165

1 December 1991 Double-resonant tunneling via surface plasmons in a metal-semiconductor system

Olga M. Sreseli, Ludvig V. Belyakov, D. N. Goryachev, B. L. Rumyantsev, Ilya D. Yaroshetskii

Proceedings Volume 1440, Optical Radiation Interaction with Matter; (1991) https://doi.org/10.1117/12.48165
Event: Optical Radiation Interaction with Matter, 1990, Leningrad, Russian Federation

Abstract

The electromagnetic field distribution in the corrugated-metal semiconductor system was computed. When the reciprocal grating vector equals the difference of wave vectors of the surface modes at the two interfaces of the metal film, the effective resonant tunneling of the electromagnetic field through the metal film is possible. Used as selective photodetectors or light emitting devices, this may substantially increase the efficiency of the mentioned structures.

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Olga M. Sreseli, Ludvig V. Belyakov, D. N. Goryachev, B. L. Rumyantsev, and Ilya D. Yaroshetskii "Double-resonant tunneling via surface plasmons in a metal-semiconductor system", Proc. SPIE 1440, Optical Radiation Interaction with Matter, (1 December 1991); https://doi.org/10.1117/12.48165

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