1 December 1991 Influence of defects on dynamics of semiconductors (Ge, Si, GaAs) heating by laser radiation
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Proceedings Volume 1440, Optical Radiation Interaction with Matter; (1991) https://doi.org/10.1117/12.48128
Event: Optical Radiation Interaction with Matter, 1990, Leningrad, Russian Federation
Abstract
The heating of a layer of semiconductors (Ge, Si, GaAs) was studied as dependent on the energy density of strongly-absorbed laser light using the monitoring of the layer's thermal radiation. The heating is shown to change essentially because of the redistribution of electron- hole plasma generated by the laser and because, with production, annealing or the initial presence of radiationless recombination centers.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Moin, "Influence of defects on dynamics of semiconductors (Ge, Si, GaAs) heating by laser radiation", Proc. SPIE 1440, Optical Radiation Interaction with Matter, (1 December 1991); doi: 10.1117/12.48128; https://doi.org/10.1117/12.48128
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