1 December 1991 Influence of defects on dynamics of semiconductors (Ge, Si, GaAs) heating by laser radiation
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Proceedings Volume 1440, Optical Radiation Interaction with Matter; (1991) https://doi.org/10.1117/12.48128
Event: Optical Radiation Interaction with Matter, 1990, Leningrad, Russian Federation
Abstract
The heating of a layer of semiconductors (Ge, Si, GaAs) was studied as dependent on the energy density of strongly-absorbed laser light using the monitoring of the layer's thermal radiation. The heating is shown to change essentially because of the redistribution of electron- hole plasma generated by the laser and because, with production, annealing or the initial presence of radiationless recombination centers.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Moin, M. Moin, } "Influence of defects on dynamics of semiconductors (Ge, Si, GaAs) heating by laser radiation", Proc. SPIE 1440, Optical Radiation Interaction with Matter, (1 December 1991); doi: 10.1117/12.48128; https://doi.org/10.1117/12.48128
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