1 July 1991 Effects of proton damage on charge-coupled devices
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Abstract
Recent analytical and experimental work has provided new insights into the production of damage sites in silicon Charge-Coupled Devices (CCDs) by energetic particles and into the effects of these sites on CCD performance. An approximate correlation is presented between experimental results and a prediction of proton-induced displacement damage, and possible explanations for remaining inconsistencies are discussed. As a consequence of this agreement, it is now possible to predict the effect of complicated space proton environments upon CCD charge transfer efficiency and other CCD performance parameters. This prediction requires evaluation of the damage resulting from only a small number (
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James R. Janesick, James R. Janesick, George B. Soli, George B. Soli, Tom S. Elliott, Tom S. Elliott, Stewart A. Collins, Stewart A. Collins, } "Effects of proton damage on charge-coupled devices", Proc. SPIE 1447, Charge-Coupled Devices and Solid State Optical Sensors II, (1 July 1991); doi: 10.1117/12.45317; https://doi.org/10.1117/12.45317
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