1 July 1991 Megapixel CCD thinning/backside progress at SAIC
Author Affiliations +
Abstract
In order to support rigorous requirements for tracking, surveillance, and astronomical applications, SAIC pursues megapixel focal plane development programs which require high performance in areas such as quantum efficiency, dynamic range, charge transfer efficiency, and total noise. To provide CCDs with these properties, special backside thinning, post- processing, anti-reflection coating, and high-speed readout capabilities have been developed in-house at SAIC. The authors discuss the thinning efforts to date on SAIC 1024 X 1024 arrays, including flattening mounts and anti-reflection coatings. Test and characterization results are presented for various chips which have been passivated using either flashgate or p+ substrate remnant. Finally, preliminary results in two related areas are discussed: initial thinning efforts on SAIC/LORAL 18 micrometers 2048 X 2048 CCDs, and electron imaging with thinned chips in a Digicon tube.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Russell Schaefer, A. Russell Schaefer, Richard H. Varian, Richard H. Varian, John R. Cover, John R. Cover, Robert G. Larsen, Robert G. Larsen, } "Megapixel CCD thinning/backside progress at SAIC", Proc. SPIE 1447, Charge-Coupled Devices and Solid State Optical Sensors II, (1 July 1991); doi: 10.1117/12.45322; https://doi.org/10.1117/12.45322
PROCEEDINGS
12 PAGES


SHARE
RELATED CONTENT

Flash Technology for CCD Imaging in the UV
Proceedings of SPIE (December 10 1986)
Large format 1280 x 1024 full frame CCD image sensor...
Proceedings of SPIE (July 01 1991)
Indium-tin-oxide biased-gate technology
Proceedings of SPIE (August 12 1992)
Six million pixel full frame true 2 f CCD image...
Proceedings of SPIE (November 25 1999)
Performance tests of large CCDs
Proceedings of SPIE (July 01 1991)

Back to Top