Paper
1 July 1991 Simplified model of the back surface of a charge-coupled device
Morley M. Blouke, Alan W. Delamere, Garry Womack
Author Affiliations +
Abstract
A simplified model of the back surface of the CCD is discussed. The model incorporates parameters which account for the important features of the back surface: a surface recombination velocity, an electric field which can assist in or oppose the collection of signal charge, and a field free region. Calculations using the model equations are presented to illustrate the effect of these parameters on the distribution of excess carriers and on the resulting quantum efficiency. The results indicate that only moderate fields are required to achieve high quantum efficiencies even at short wavelengths.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Morley M. Blouke, Alan W. Delamere, and Garry Womack "Simplified model of the back surface of a charge-coupled device", Proc. SPIE 1447, Charge-Coupled Devices and Solid State Optical Sensors II, (1 July 1991); https://doi.org/10.1117/12.45320
Lens.org Logo
CITATIONS
Cited by 7 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Charge-coupled devices

Quantum efficiency

Electrons

Solid state electronics

Instrument modeling

Optical sensors

Information operations

RELATED CONTENT

Effects of proton damage on charge-coupled devices
Proceedings of SPIE (July 01 1991)
Performance tests of large CCDs
Proceedings of SPIE (July 01 1991)
Simple model of electron-bombarded CCD gain
Proceedings of SPIE (May 01 1994)
Charge-Coupled Device Pinning Technologies
Proceedings of SPIE (May 23 1989)

Back to Top