Translator Disclaimer
1 July 1991 Simplified model of the back surface of a charge-coupled device
Author Affiliations +
Abstract
A simplified model of the back surface of the CCD is discussed. The model incorporates parameters which account for the important features of the back surface: a surface recombination velocity, an electric field which can assist in or oppose the collection of signal charge, and a field free region. Calculations using the model equations are presented to illustrate the effect of these parameters on the distribution of excess carriers and on the resulting quantum efficiency. The results indicate that only moderate fields are required to achieve high quantum efficiencies even at short wavelengths.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Morley M. Blouke, Alan W. Delamere, and Garry Womack "Simplified model of the back surface of a charge-coupled device", Proc. SPIE 1447, Charge-Coupled Devices and Solid State Optical Sensors II, (1 July 1991); https://doi.org/10.1117/12.45320
PROCEEDINGS
14 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Radiation concerns for the Solar-A soft x-ray telescope
Proceedings of SPIE (June 30 1991)
Performance tests of large CCDs
Proceedings of SPIE (June 30 1991)
Backside Charging Of The CCD
Proceedings of SPIE (December 10 1985)
Simple model of electron-bombarded CCD gain
Proceedings of SPIE (April 30 1994)
Charge-Coupled Device Pinning Technologies
Proceedings of SPIE (May 22 1989)

Back to Top