1 June 1991 Thinned backside-illuminated cooled CCDs for UV and VUV applications
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It is well known that thinned backside-illuminated CCD image sensors are very efficient for electron beam imaging. The authors have adapted an electron-bombarded (EB) CCD for application in UV and VUV spectral regions. This adaptation includes the creation of a shallow accumulation layer near the device backside surface either by ion implantation and annealing or by a certain chemical treatment of the surface. Preliminary experimental results confirm the applicability of the developed procedure in achieving a reasonable quantum efficiency. Some problems associated with the UV and VUV imagers design and fabrication are discussed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ilia Nikolaevic Dalinenko, Ilia Nikolaevic Dalinenko, G. A. Kuz'min, G. A. Kuz'min, Alexandre Victorovic Malyarov, Alexandre Victorovic Malyarov, Alexander M. Prokhorov, Alexander M. Prokhorov, Mikhail Ya. Schelev, Mikhail Ya. Schelev, } "Thinned backside-illuminated cooled CCDs for UV and VUV applications", Proc. SPIE 1449, Electron Image Tubes and Image Intensifiers II, (1 June 1991); doi: 10.1117/12.44276; https://doi.org/10.1117/12.44276

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