PROCEEDINGS VOLUME 1463
MICROLITHOGRAPHY | 1-31 MARCH 1991
Optical/Laser Microlithography IV
Editor(s): Victor Pol
MICROLITHOGRAPHY
1-31 March 1991
San Jose, CA, United States
Deep-UV Processing
Proc. SPIE 1463, Deep-UV photolithography linewidth variation from reflective substrates, 0000 (1 July 1991); doi: 10.1117/12.44770
Proc. SPIE 1463, Improving the performance and usability of a wet-developable DUV resist for sub-500nm lithography, 0000 (1 July 1991); doi: 10.1117/12.44771
Proc. SPIE 1463, Use of antireflective coatings in deep-UV lithography, 0000 (1 July 1991); doi: 10.1117/12.44772
Process Optimization and Phase-Shift Methods
Proc. SPIE 1463, Optimum numerical aperture for optical projection microlithography, 0000 (1 July 1991); doi: 10.1117/12.44773
Proc. SPIE 1463, Process enhancement for a new generation g-line photolithographic system, 0000 (1 July 1991); doi: 10.1117/12.44774
Proc. SPIE 1463, Optical lithography with chromeless phase-shifted masks, 0000 (1 July 1991); doi: 10.1117/12.44775
Proc. SPIE 1463, Fabrication of grooved-glass substrates by phase-mask lithography, 0000 (1 July 1991); doi: 10.1117/12.44776
Phase-Shift Methods II
Proc. SPIE 1463, Conjugate twin-shifter for the new phase-shift method to high-resolution lithography, 0000 (1 July 1991); doi: 10.1117/12.44777
Proc. SPIE 1463, Exploration of fabrication techniques for phase-shifting masks, 0000 (1 July 1991); doi: 10.1117/12.44778
Proc. SPIE 1463, Phase-shifting structures for isolated features, 0000 (1 July 1991); doi: 10.1117/12.44779
Phase-Shift Methods III
Proc. SPIE 1463, Impact of phase masks on deep-UV lithography, 0000 (1 July 1991); doi: 10.1117/12.44780
Proc. SPIE 1463, Improvement of focus and exposure latitude by the use of phase-shifting masks for DUV applications, 0000 (1 July 1991); doi: 10.1117/12.44781
Proc. SPIE 1463, Variable phase-shift mask for deep-submicron optical lithography, 0000 (1 July 1991); doi: 10.1117/12.44782
Proc. SPIE 1463, Phase-shifting photolithography applicable to real IC patterns, 0000 (1 July 1991); doi: 10.1117/12.44783
Process Applications
Proc. SPIE 1463, Study of the relationship between exposure margin and photolithographic process latitude and mask linearity, 0000 (1 July 1991); doi: 10.1117/12.44784
Proc. SPIE 1463, Investigation of interlevel proximity effects case of the gate level over LOCOS, 0000 (1 July 1991); doi: 10.1117/12.44785
Proc. SPIE 1463, 64-Mbit DRAM production with i-line stepper, 0000 (1 July 1991); doi: 10.1117/12.44786
Poster Session
Proc. SPIE 1463, Two-layer 1.2-micron pitch multilevel metal demonstrator using resist patterning by surface imaging and dry development, 0000 (1 July 1991); doi: 10.1117/12.44787
Metrology and Alignment Methods
Proc. SPIE 1463, Astigmatism and field curvature from pin-bars, 0000 (1 July 1991); doi: 10.1117/12.44788
Proc. SPIE 1463, Laser alignment modeling using rigorous numerical simulations, 0000 (1 July 1991); doi: 10.1117/12.44789
Proc. SPIE 1463, New alignment sensors for wafer stepper, 0000 (1 July 1991); doi: 10.1117/12.44790
Proc. SPIE 1463, Experimental and simulation studies of alignment marks, 0000 (1 July 1991); doi: 10.1117/12.44791
Process Simulation I
Proc. SPIE 1463, Computer simulation of 0.5-micrometer lithography for a 16-megabit DRAM, 0000 (1 July 1991); doi: 10.1117/12.44792
Proc. SPIE 1463, Simulation of an advanced negative i-line photoresist, 0000 (1 July 1991); doi: 10.1117/12.44793
Proc. SPIE 1463, Simulation analysis of deep-UV chemically amplified resist, 0000 (1 July 1991); doi: 10.1117/12.44794
Process Simulation II
Proc. SPIE 1463, Three-dimensional simulation of optical lithography, 0000 (1 July 1991); doi: 10.1117/12.44795
Proc. SPIE 1463, Effects of higher order aberrations on the process window, 0000 (1 July 1991); doi: 10.1117/12.44796
Proc. SPIE 1463, Binary and phase-shifting image design for optical lithography, 0000 (1 July 1991); doi: 10.1117/12.44797
Phase-Shift Methods II
Proc. SPIE 1463, Investigation of self-aligned phase-shifting reticles by simulation techniques, 0000 (1 July 1991); doi: 10.1117/12.44798
Poster Session
Proc. SPIE 1463, Design methodology for dark-field phase-shifted masks, 0000 (1 July 1991); doi: 10.1117/12.44799
Proc. SPIE 1463, Origins of asymmetry in spin-cast films over topography, 0000 (1 July 1991); doi: 10.1117/12.44800
Proc. SPIE 1463, Fabrication of phase-shifting mask, 0000 (1 July 1991); doi: 10.1117/12.44801
Proc. SPIE 1463, Improvements in 0.5-micron production wafer steppers, 0000 (1 July 1991); doi: 10.1117/12.44802
Proc. SPIE 1463, Optimization of partial coherence for half-micron i-line lithography, 0000 (1 July 1991); doi: 10.1117/12.44803
Proc. SPIE 1463, Excimer laser photolithography with a 1:1 broadband catadioptric optics, 0000 (1 July 1991); doi: 10.1117/12.44804
Proc. SPIE 1463, Simulations of bar printing over a MOSFET device using i-line and deep-UV resists, 0000 (1 July 1991); doi: 10.1117/12.44805
Phase-Shift Methods III
Proc. SPIE 1463, Phase-shift mask applications, 0000 (1 July 1991); doi: 10.1117/12.44806
Poster Session
Proc. SPIE 1463, Overlay and matching strategy for large-area lithography, 0000 (1 July 1991); doi: 10.1117/12.44807
Proc. SPIE 1463, Reduction of the standing wave effect in positive photoresist using an antireflection coating, 0000 (1 July 1991); doi: 10.1117/12.44808
Proc. SPIE 1463, Evaluation of a photoresist process for 0.75-micron g-line lithography, 0000 (1 July 1991); doi: 10.1117/12.44809
Proc. SPIE 1463, Control of proximity effects on CD uniformity through the use of process parameters derived from a statistically designed experiment, 0000 (1 July 1991); doi: 10.1117/12.44810
Proc. SPIE 1463, I-line lithography for highly reproducible fabrication of surface acoustic wave devices, 0000 (1 July 1991); doi: 10.1117/12.44811
Proc. SPIE 1463, Process optimization: a case study on the application of Taguchi methods in optical lithography, 0000 (1 July 1991); doi: 10.1117/12.44812
Proc. SPIE 1463, Primary research for mechanism of forming PLH, 0000 (1 July 1991); doi: 10.1117/12.44813
Proc. SPIE 1463, Disk-shaped VUV+O source used as resist asher and resist developer, 0000 (1 July 1991); doi: 10.1117/12.44814
Proc. SPIE 1463, Results of photolithographic cluster cells in actual production, 0000 (1 July 1991); doi: 10.1117/12.44815
Proc. SPIE 1463, Photoresist bake conditions and their effects on lithography process control, 0000 (1 July 1991); doi: 10.1117/12.44816
Proc. SPIE 1463, Deep-UV diagnostics using continuous tone photoresist, 0000 (1 July 1991); doi: 10.1117/12.44817
Lasers and Laser Applications
Proc. SPIE 1463, Comparison of 248-nm line narrowing resonator optics for deep-UV lithography lasers, 0000 (1 July 1991); doi: 10.1117/12.44818
Proc. SPIE 1463, Argon fluoride excimer laser source for sub-0.25 mm optical lithography, 0000 (1 July 1991); doi: 10.1117/12.44819
Proc. SPIE 1463, High-average-power narrow-band KrF excimer laser, 0000 (1 July 1991); doi: 10.1117/12.44820
Deep-UV Systems
Proc. SPIE 1463, 0.5-micron deep-UV lithography using a Micrascan-90 step-and-scan exposure tool, 0000 (1 July 1991); doi: 10.1117/12.44821
Proc. SPIE 1463, Novel high-resolution large-field scan-and-repeat projection lithography system, 0000 (1 July 1991); doi: 10.1117/12.44822
Proc. SPIE 1463, Multispot scanning exposure system for excimer laser stepper, 0000 (1 July 1991); doi: 10.1117/12.44823
Proc. SPIE 1463, New family of 1:1 catadioptric broadband deep-UV high-Na lithography lenses, 0000 (1 July 1991); doi: 10.1117/12.44824
New Production Systems
Proc. SPIE 1463, New i-line lens for half-micron lithography, 0000 (1 July 1991); doi: 10.1117/12.44825