1 July 1991 Computer simulation of 0.5-micrometer lithography for a 16-megabit DRAM
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Abstract
This paper describes the computer simulation results of 0.5 micrometers lithography for a 16 Mb DRAM. The model demonstrates, via aerial profiles, the increased focus latitude for deep- ultraviolet (DUV) lithography as compared to i-line lithography. The result translates into a larger process window for manufacturing DRAMs using DUV lithography. The model also isolated an imaging problem at one of the critical levels. Two probable solutions were simulated and then lithographically confirmed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John G. Maltabes, John G. Maltabes, Katherine C. Norris, Katherine C. Norris, Dean Writer, Dean Writer, } "Computer simulation of 0.5-micrometer lithography for a 16-megabit DRAM", Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44792; https://doi.org/10.1117/12.44792
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