1 July 1991 Disk-shaped VUV+O source used as resist asher and resist developer
Author Affiliations +
An 8 cm diameter disk-shaped oxygen plasma is used as a resist asher and resist developer located in a plasma-free region. The resist surface is exposed to both 130.6 nm flux (10-2W cm-2 Sr-1 oxygen resonance line) as well as an atomic oxygen flux (1015 atoms cm-2 sec-1). A high ashing rate of 1.5 micrometers /min is obtained at 100 degree(s)C, with a rather low apparent excitation energy of 1.07 kcal per mol. In contrast, by introducing 8 atomic % silicon into plasma polymerized styrene, the authors observed an unmeasurable etch rate after a brief induction time to form a Si-O-C containing a protective layer with a thickness loss of 0.2 micrometers . These results show a potential ability of the plasma apparatus used as a low-temperature defect-free resist ashing and dry development silylated resist.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shuzo Hattori, Shuzo Hattori, George J. Collins, George J. Collins, Zenqi Yu, Zenqi Yu, Dai Sugimoto, Dai Sugimoto, Masahiro Saita, Masahiro Saita, } "Disk-shaped VUV+O source used as resist asher and resist developer", Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44814; https://doi.org/10.1117/12.44814

Back to Top