1 July 1991 Disk-shaped VUV+O source used as resist asher and resist developer
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Abstract
An 8 cm diameter disk-shaped oxygen plasma is used as a resist asher and resist developer located in a plasma-free region. The resist surface is exposed to both 130.6 nm flux (10-2W cm-2 Sr-1 oxygen resonance line) as well as an atomic oxygen flux (1015 atoms cm-2 sec-1). A high ashing rate of 1.5 micrometers /min is obtained at 100 degree(s)C, with a rather low apparent excitation energy of 1.07 kcal per mol. In contrast, by introducing 8 atomic % silicon into plasma polymerized styrene, the authors observed an unmeasurable etch rate after a brief induction time to form a Si-O-C containing a protective layer with a thickness loss of 0.2 micrometers . These results show a potential ability of the plasma apparatus used as a low-temperature defect-free resist ashing and dry development silylated resist.
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Shuzo Hattori, Shuzo Hattori, George J. Collins, George J. Collins, Zenqi Yu, Zenqi Yu, Dai Sugimoto, Dai Sugimoto, Masahiro Saita, Masahiro Saita, } "Disk-shaped VUV+O source used as resist asher and resist developer", Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44814; https://doi.org/10.1117/12.44814
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