This paper introduces an example for fabricating a phase-shifting mask with a self-aligned process. In this example, a step on the quartz substrate formed by dry etching as a shifter was used. Dry etching was also used for over-etching of chromium (Cr) to form the shifter region. The uniformity and controllability in these etching processes was evaluated. The result has proven the shifter depth accuracy of 15 nm (3(sigma) ) and the shifter width accuracy of 0.07 micrometers (3(sigma) ).