1 July 1991 Fabrication of phase-shifting mask
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This paper introduces an example for fabricating a phase-shifting mask with a self-aligned process. In this example, a step on the quartz substrate formed by dry etching as a shifter was used. Dry etching was also used for over-etching of chromium (Cr) to form the shifter region. The uniformity and controllability in these etching processes was evaluated. The result has proven the shifter depth accuracy of 15 nm (3(sigma) ) and the shifter width accuracy of 0.07 micrometers (3(sigma) ).
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Naoyuki Ishiwata, Naoyuki Ishiwata, Takao Furukawa, Takao Furukawa, "Fabrication of phase-shifting mask", Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44801; https://doi.org/10.1117/12.44801

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