Paper
1 July 1991 New i-line lens for half-micron lithography
Kazuhiro Takahashi, Masakatsu Ohta, Toshiyuki Kojima, Miyoko Noguchi
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Abstract
In the last few years, i-line lithography has made remarkable progress. It is based on the development of high-contrast i-line resists and of high-NA lenses owing to improvement of the transmittance of glass for i-line. It is generally assumed that i-line steppers will play a major role in the production of 16 Mbit DRAMs. For half-micron production, CANON has developed a new i-line lens with a high NA of 0.52 and a wide image field 28.28 mm in diameter. This paper first reports on the image performance of this lens for half-micron, and then describes the distortion characteristics and magnification stability of the lens. In the last section, the possibility of i-line lithography of sub-half-micron referring to the experimental results on 0.4 micrometers L/S applications are discussed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuhiro Takahashi, Masakatsu Ohta, Toshiyuki Kojima, and Miyoko Noguchi "New i-line lens for half-micron lithography", Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); https://doi.org/10.1117/12.44825
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KEYWORDS
Distortion

Lithography

Optical lithography

Scanning electron microscopy

Photography

Glasses

Critical dimension metrology

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