Optimization of partial coherence for half-micron i-line lithography

Paolo Canestrari; Giorgio A. L. M. Degiorgis; Paolo De Natale; Lucia Gazzaruso; Giovanni Rivera

doi:10.1117/12.44803

1 July 1991 Optimization of partial coherence for half-micron i-line lithography

Paolo Canestrari, Giorgio A. L. M. Degiorgis, Paolo De Natale, Lucia Gazzaruso, Giovanni Rivera

Proceedings Volume 1463, Optical/Laser Microlithography IV; (1991) https://doi.org/10.1117/12.44803
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

A wide range of partial coherences is explored in order to clarify their real impact on lithographic latitude of different kinds of patterns. The effects of coherence variations on process characteristics are reported in terms of exposure latitude and focus budget. It is shown that the use of a particular coherence, different from the standard one, can practically benefit the latitude of a critical layer such as the contact mask.

Citation Download Citation

Paolo Canestrari, Giorgio A. L. M. Degiorgis, Paolo De Natale, Lucia Gazzaruso, and Giovanni Rivera "Optimization of partial coherence for half-micron i-line lithography", Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); https://doi.org/10.1117/12.44803

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