Simulation of an advanced negative i-line photoresist

Eytan Barouch; Uwe Hollerbach; Steven A. Orszag; Mary Tedd Allen; Gary S. Calabrese

doi:10.1117/12.44793

1 July 1991 Simulation of an advanced negative i-line photoresist

Eytan Barouch, Uwe Hollerbach, Steven A. Orszag, Mary Tedd Allen, Gary S. Calabrese

Proceedings Volume 1463, Optical/Laser Microlithography IV; (1991) https://doi.org/10.1117/12.44793
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

A new i-line negative resist has been developed which exploits acid-catalyzed cross-linking chemistry in combination with a sensitizing chromophore and a light absorbing dye. During exposure acid is generated by excitation energy transfer from the sensitizer to a halogen- containing compound. Concurrently, the highly absorbing dye is bleached. The optical component of this resist can be modeled as follows: the imaginary part of the complex refractive index is proportional to A1M1 + A2M2 + B, where M1 is the bleachable dye concentration, M2 is the sensitizer concentration, B is the fixed absorption and A1 and A2 are the corresponding Dill coefficients for bleachable absorbance. The kinetics of the bleachable dye and sensitizer decays are given by (delta) Mi/(delta) t equals -CiMiI. The final acid concentration is a nonlinear function of these concentrations and can be expressed as H equals [(1-M2) + (kappa) (1-M1)]/(1 + (kappa) ) with (kappa) determined experimentally. The exposure is computed by our spectral element numerical method. As exposure terminates, post exposure baking (PEB) takes place, similar in form to the crosslinking of the deep-UV product MegapositR SNRTM 248 Series photoresist. This step is modeled via reaction diffusion equations, producing a nonsoluble monolith due to cross-linking of the polymers. The final profiles are obtained by solution of a system of reaction-diffusion equations and are described graphically using a novel dynamic triangulation algorithm. A comparison between simulated and actual micrographs is given and process latitude and CD control discussed.

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Eytan Barouch, Uwe Hollerbach, Steven A. Orszag, Mary Tedd Allen, and Gary S. Calabrese "Simulation of an advanced negative i-line photoresist", Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); https://doi.org/10.1117/12.44793

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