1 July 1991 Two-layer 1.2-micron pitch multilevel metal demonstrator using resist patterning by surface imaging and dry development
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Proceedings Volume 1463, Optical/Laser Microlithography IV; (1991); doi: 10.1117/12.44787
Event: Microlithography, 1991, San Jose, CA, United States
Abstract
Sub-micron resist features obtained by surface imaging and dry development have been used as masks in the pattern transfer of multilevel metal stacks in a single-wafer multichamber etcher. The calibration of such a negative working submicron lithographic process, derived from a g-line wafer stepper having a specified resolution of 1 micron, is described. Surface imaging was initiated by silylation of a proprietary resist using HMDS, while dry development was performed in a single-stage oxygen process in a conventional reactive ion etcher. Metal etch processes are outlined in conjunction with their effect on resist integrity and removal and the need for post-development deep-UV hardening. While not being part of the two-layer demonstrator, submicron 'via' hole definition in polyimide interlayer dielectric is demonstrated in a single-stage dry development/pattern transfer process.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian Martin, Ian M. Snowden, Simon H. Mortimer, "Two-layer 1.2-micron pitch multilevel metal demonstrator using resist patterning by surface imaging and dry development", Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44787; https://doi.org/10.1117/12.44787
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KEYWORDS
Metals

Photoresist processing

Etching

Semiconducting wafers

Deep ultraviolet

Optical lithography

Ions

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