1 July 1991 Variable phase-shift mask for deep-submicron optical lithography
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Abstract
A variable phase-shift mask for optical lithography, which gives several kinds of optical phase shifting to light transmitted through the mask apertures, is proposed, and image quality obtained with this mask is investigated. Clear regions with some optical phase shiftings between 0 degree(s) and 180 degree(s) are inserted between the two connected apertures, which are 180 degree(s) out of phase. The role of these inserted regions is to decrease the dip in intensity distribution, which is occasionally needed for producing complicated features. The advantages of this variable phase-shift mask and the effect of wave-front aberrations on imaging characteristics are investigated.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsuneo Terasawa, Norio Hasegawa, Akira Imai, Toshihiko P. Tanaka, Souichi Katagiri, "Variable phase-shift mask for deep-submicron optical lithography", Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44782; https://doi.org/10.1117/12.44782
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