1 July 1991 Characterization of automatic overlay measurement technique for sub-half-micron devices
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Proceedings Volume 1464, Integrated Circuit Metrology, Inspection, and Process Control V; (1991); doi: 10.1117/12.44441
Event: Microlithography, 1991, San Jose, CA, United States
Abstract
Measurement precision, especially the measurement offset of an automatic overlay measurement technique, was studied for application to sub-half micron device manufacturing. Experimental data showed that the measurement offset depended on the cross-section structure rather than the reflectivity or the roughness of the overlay marks. Dependence of the measurement offset upon equipment factors such as the incident angle of illumination was also studied. This paper also shows measurement offsets on critical levels of the sub-half micron device manufacturing.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Kawai, Keiji Fujiwara, Kouichirou Tsujita, Hitoshi Nagata, "Characterization of automatic overlay measurement technique for sub-half-micron devices", Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); doi: 10.1117/12.44441; https://doi.org/10.1117/12.44441
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KEYWORDS
Overlay metrology

Semiconducting wafers

Surface roughness

Reflectivity

Manufacturing

Inspection

Integrated circuits

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