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1 July 1991 Charging phenomena in e-beam metrology
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Abstract
As submicron VLSI production becomes standard, metrology tools tend to rely on the intrinsic high resolution of the e-beam. Interactions of electrons with the insulating materials typical to the IC industry generate a charging phenomena. In this paper charging types are classified and modeled. Since charging can have severe effects on the accuracy, precision and stability of metrology tools, proper countermeasures must be taken. This is especially true as these systems become automated, in order to obtain correct measurements without manual intervention. The authors discuss diagnostic techniques which indicate the type of charging and the appropriate countermeasure. The paper is organized with, first, a discussion of the measurement process: relating the waveform to the real feature. Then the basic physics of charging is discussed with order of magnitude calculation. The influence of charging on measurement is then detailed relative to the three basic metrology qualifiers: accuracy, precision and stability. Practical methods for avoiding the effects of charging are included.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dorron D. Levy and Karl L. Harris "Charging phenomena in e-beam metrology", Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); https://doi.org/10.1117/12.44454
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