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1 July 1991 New phase-shifting mask structure for positive resist process
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Abstract
One of the problems in applying the phase-shifting method in the positive resist process is the resist bridge generated at the phase-shifter edge. This problem has occurred in the past because the light intensity decreased to zero due to the interference at the phase-shifter edge. In order to solve this problem, we propose a new phase-shifting mask structure containing an intermediate phase-shifter. This intermediate phase-shifter will change the phase of the light by 90 degrees and will be placed at a peripheral edge of the conventional phase-shifter on the transparent substrate. The effect of this mask structure is demonstrated. A 0.3 micrometers lines and spaces pattern is successfully resolved without resist bridge, and the DOF at a 0.35 micrometers lines and spaces pattern is 1.2 micrometers wide. It is also demonstrated that this mask structure is effective on patterns such as LOCOS.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Junji Miyazaki, Kazuya Kamon, Nobuyuki Yoshioka, Shuichi Matsuda, Masato Fujinaga, Yaichiro Watakabe, and Hitoshi Nagata "New phase-shifting mask structure for positive resist process", Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); https://doi.org/10.1117/12.44445
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