1 July 1991 Pattern recognition approach to trench bottom-width measurement
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Abstract
Two approaches to pattern recognition of the width and slope of trenches in photoresist and silicon are described. One method depends on the comparison of the experimental linescans with theoretical calculations of the linescans obtained with either a real-time confocal scanning optical microscope (RSOM) or the Mirau Correlation Microscope (MCM). Comparison of theory and experiments for trenches in photoresist and silicon are in excellent agreement for all trench widths from 0.5 micrometers to 2 micrometers . A second method depends on the use of correlation techniques using the MCM and has enables us to obtain good linearity in trench width measurements down to a width of 0.35 micrometers in 1 micrometers thick photoresist.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ching-Hua Chou, John L. Berman, Stanley S. C. Chim, Timothy R. Piwonka-Corle, Guoqing Xiao, and Gordon S. Kino "Pattern recognition approach to trench bottom-width measurement", Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); doi: 10.1117/12.44431; https://doi.org/10.1117/12.44431
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