1 July 1991 Phase-shift mask technology: requirements for e-beam mask lithography
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Abstract
Phase-shifted patterns (alternating, 90-degree, and chromeless) have been incorporated into a reticle layout, fabricated with a MEBESR III system, and evaluated experimentally at 365 nm using steppers with numerical aperture (NA) ranging from 0.4 to 0.48 and partial coherence ranging from 0.38 to 0.62. Test circuit layouts simulate actual circuit designs with critical dimensions ranging from 0.2 micrometers to 1.2 micrometers . These results, combined with experimental measurement of layer to layer registration and aerial image simulations, provide a first-order assessment of e-beam lithography requirements to support phase-shift mask technology.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven K. Dunbrack, Andrew J. Muray, Charles A. Sauer, Richard L. Lozes, John L. Nistler, William H. Arnold, David F. Kyser, Anna Maria Minvielle, Moshe E. Preil, Bhanwar Singh, Michael K. Templeton, "Phase-shift mask technology: requirements for e-beam mask lithography", Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); doi: 10.1117/12.44444; https://doi.org/10.1117/12.44444
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