1 August 1991 Advanced lithographic methods for contact patterning on severe topography
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High packing density integrated circuits such as 4 MB DRAM require many interconnect layers. The resulting topography can be very challenging at each layer, particularly for patterning contacts. This paper provides practical techniques for imaging submicron contact holes on topographical substrates. Patterning is done using a 0.48 NA i-line stepper, and methods for achieving 0.5 micrometers contact holes and other features on topographical substrates are described. Results for process latitudes, depth of focus, and feature size dependencies are reported.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ronfu Chu, Ronfu Chu, James S. Greeneich, James S. Greeneich, Barton A. Katz, Barton A. Katz, Hwang-Kuen Lin, Hwang-Kuen Lin, Dong-Tsair Huang, Dong-Tsair Huang, } "Advanced lithographic methods for contact patterning on severe topography", Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); doi: 10.1117/12.47362; https://doi.org/10.1117/12.47362

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