1 August 1991 Application of an electron-beam scattering parameter extraction method for proximity correction in direct-write electron-beam lithography
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Abstract
Proximity correction schemes as used in electron beam lithography require the determination of electron scattering within the exposed resist and underlying substrate material. Scattering of an electron beam in a solid can be described by a double Gaussian function with coefficients (alpha) (forward scattering), (beta) (backward scattering), and (eta) E (ratio of energy deposition due to backscattering and forward scattering). These three coefficients are also referred to as 'proximity parameters.' This paper discussed proximity parameters mainly as a function of resist thickness. New experimental results are reported.
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Rudolf M. Weiss, Robert M. Sills, "Application of an electron-beam scattering parameter extraction method for proximity correction in direct-write electron-beam lithography", Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); doi: 10.1117/12.47356; https://doi.org/10.1117/12.47356
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