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1 August 1991 Chemically amplified resists for x-ray and e-beam lithography
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The development of both negative and positive resists with high sensitivity and high resolution capability is critical to the production of devices using x-ray exposure technology. This paper describes a class of aqueous developable acid hardened negative and positive resists which produce crosslinked images under x-ray exposure and subsequent processing steps. The resists are chemically amplified for high sensitivity. Linewidths down to 0.1 micron have been printed with a negative resist using e-beam exposure, and 0.4 micron mask-limited featurers have been printed with an x-ray dose of > 60 mJ/cm2. The feasibility of a high resolution positive acid hardened resist has been demonstrated and remains to be optimized.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Amanda K. Berry, Karen A. Graziano, Stephen D. Thompson, James Welch Taylor, Doowon Suh, and Dean Plumb "Chemically amplified resists for x-ray and e-beam lithography", Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991);

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