As feature sizes of semiconductors grow smaller, a resist having dry etching durability and high sensitivity is required for electron beam lithography. However, the positive type electron beam resist having both high sensitivity and high dry etching durability, which suits for practical use, has not been developed yet. In order to solve this problem, a homologous series of poly(alkyl 2-cyanoacrylate) has been investigated. As a result, the new positive type electron beam resist having high sensitivity, high dry etching durability, and high thermal resistance has been developed. This new type of resist consists of poly(cyclohexyl 2- cyanoacrylate), and these features of this resist are due to the cyano and the cyclohexyl groups. The dry etching durability of this resist is 2.19 times as high as that of poly(mthyl methacrylate) (PMMA). The sensitivity is 1.7 (mu) C/cm2 at accelerating voltage of 20 kV, which is about the same as that of poly(butene-1-sulfone) (PBS). Moreover, poly(cyclohexyl 2-cyanoacrylate) has the glass transition of 152 degree(s)C, and then it is thermally stable. Using this resist in photomask fabrication by dry etching, the chrome linewidth uniformity of 0.034 micrometers 3 (sigma) can be obtained.