1 August 1991 Mushroom-shaped gates defined by e-beam lithography down to 80-nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess
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Abstract
Sub-0.1 micrometers mushroom-shaped gates (T-gates) have been realized with a three-layer resist technique using e-beam exposure. The exposure was carried out on a Philips EPBG-3 system operating at 50 kV. The resist system and writing strategy were investigated. Test exposures on SiN-capped GaAs wafers with ohmic contacts having the same topography as active devices were carried out. Using this T-gate lithography, pseudomorphic AlGaAs/InGaAs/GaAs HEMTs were fabricated. These devices have transit frequencies of 120 GHz.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Axel Huelsmann, Axel Huelsmann, G. Kaufel, G. Kaufel, Brian Raynor, Brian Raynor, Klaus Koehler, Klaus Koehler, T. Schweizer, T. Schweizer, Juergen Braunstein, Juergen Braunstein, Michael Schlechtweg, Michael Schlechtweg, Paul J. Tasker, Paul J. Tasker, Theo F. Jakobus, Theo F. Jakobus, } "Mushroom-shaped gates defined by e-beam lithography down to 80-nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess", Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); doi: 10.1117/12.47357; https://doi.org/10.1117/12.47357
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