Simulation of low-energy x-ray lithography using a diamond membrane mask

Shinya Hasegawa; Katsumi Suzuki

doi:10.1117/12.47350

1 August 1991 Simulation of low-energy x-ray lithography using a diamond membrane mask

Shinya Hasegawa, Katsumi Suzuki

Proceedings Volume 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing; (1991) https://doi.org/10.1117/12.47350
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

Proximity low energy x-ray lithography using a diamond membrane, in which the wavelength is around 5 nm, is evaluated in order to avoid the difficulties of mask fabrication, inspection, and defect repairs. The resolution is estimated based on a simulation in a SR exposure system optimized considering mask contrast and absorbed power in a resist. The simulated data show that 0.2 micrometers lines and spaces of a 0.1 micrometers tungsten absorber on a 1 micrometers diamond membrane are replicated in a 1 micrometers resist at a mask-to-wafer gap of 10 micrometers.

Citation Download Citation

Shinya Hasegawa and Katsumi Suzuki "Simulation of low-energy x-ray lithography using a diamond membrane mask", Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); https://doi.org/10.1117/12.47350

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