1 August 1991 Simulation of low-energy x-ray lithography using a diamond membrane mask
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Proximity low energy x-ray lithography using a diamond membrane, in which the wavelength is around 5 nm, is evaluated in order to avoid the difficulties of mask fabrication, inspection, and defect repairs. The resolution is estimated based on a simulation in a SR exposure system optimized considering mask contrast and absorbed power in a resist. The simulated data show that 0.2 micrometers lines and spaces of a 0.1 micrometers tungsten absorber on a 1 micrometers diamond membrane are replicated in a 1 micrometers resist at a mask-to-wafer gap of 10 micrometers.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shinya Hasegawa, Shinya Hasegawa, Katsumi Suzuki, Katsumi Suzuki, } "Simulation of low-energy x-ray lithography using a diamond membrane mask", Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); doi: 10.1117/12.47350; https://doi.org/10.1117/12.47350

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