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1 June 1991 Bilayer resist system utilizing alkali-developable organosilicon positive photoresist
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A bi-layer resist system utilizing an alkali-developable organosilicon positive photoresist (OSPR) has been developed. The composite prepared from an alkali-soluble organosilicon polymer, poly(p- hydroxybenzylsilsesquioxane) and naphthoquinone diazide becomes a alkali-developable positive photoresist which is sensitive to UV (i line - g line) region, and exhibited high oxygen reactive ion etching (O2 RIE) resistance. The sensitivity and the resolution of OSPR are almost the same as those of conventional novolac-based positive photoresists. The bi-layer resist system utilizing OSPR as the top imaging layer gave fine patterns of underlayers with high aspect ratio easily.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuo Nate, Akiko Mizushima, and Hisashi Sugiyama "Bilayer resist system utilizing alkali-developable organosilicon positive photoresist", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991);

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