1 June 1991 Chemically amplified negative-tone photoresist for sub-half-micron device and mask fabrication
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In this paper we discuss a new alkaline soluble negative acting photoresist which incorporates a phenolic based resin, urea/formaldehyde prepolymer as a crosslinking agent and an organic acid-generating sensitizer. This system, dubbed 'EBX' (Electron Beam/X-ray) resist has demonstrated excellent lithographic properties in various exposure modes. Discussion will center on imaging characteristics in the deep and mid ultraviolet using Micrascan I and I-line (365 nm) steppers; electron-beam imaging with MEBES 10 kV mask maker and IBM's EL-4 50 kV electron beam exposure system; and XRAY imaging with point source soft x-ray and synchotron hard x-ray lithography.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Will Conley, Will Conley, Robert Dundatscheck, Robert Dundatscheck, Jeffrey D. Gelorme, Jeffrey D. Gelorme, John Horvat, John Horvat, Ronald M. Martino, Ronald M. Martino, Elizabeth Murphy, Elizabeth Murphy, Anne Petrosky, Anne Petrosky, Gary T. Spinillo, Gary T. Spinillo, Kevin J. Stewart, Kevin J. Stewart, Robert Wilbarg, Robert Wilbarg, Robert L. Wood, Robert L. Wood, "Chemically amplified negative-tone photoresist for sub-half-micron device and mask fabrication", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46358; https://doi.org/10.1117/12.46358

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