Paper
1 June 1991 Mechanism of dissolution inhibition of novolak-diazoquinone resist
Mitsuhiro Furuta, Shingo Asaumi, Akira Yokota
Author Affiliations +
Abstract
Generally accepted mechanism in the development of a positive photoresist is that the diazonaphthoquinone (NDQ) in the unexposed portion undergoes azo-coupling with novolak resin to thereby form a pattern. The azo dyes having free phenolic groups are, however, soluble to an aqueous base solution. Since an azo-coupling product is already present in the developer-dissolved material upon immersion of an unexposed photoresist in a developer, it is unlikely that the azo- coupling product has an effect of inhibiting the dissolution of the azo dyes into the developer. When a photoresist is immersed in a developer, the proportion of NDQ increases as well as the amount of the trihydroxybenzophenone-diazonaphthoquinone-sulfonate (NDQ-ester) and of the higher molecular weight portion of the novolak resin. We accordingly assumed that the dissolution-inhibiting effect was exerted by a mixture of NDQ-triester and the higher molecular weight portion of the novolak resin deposited on the surface of the photoresist during development.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mitsuhiro Furuta, Shingo Asaumi, and Akira Yokota "Mechanism of dissolution inhibition of novolak-diazoquinone resist", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46396
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KEYWORDS
Photoresist developing

Photoresist materials

Absorption

Semiconducting wafers

Solids

Absorbance

Sensors

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