1 June 1991 Negative chemical amplification resist systems based on polyhydroxystyrenes and N-substituted imides or aldehydes
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Abstract
Aqueous base developable negative deep UV resist systems composed of phenolic resins, monofunctional latent electrophiles, and a sulfonium salt photochemical acid generator are described. This study was carried out to see whether attachment of a bulky substituent onto the phenolic group via C- or O-alkylation reduces the dissolution rate of the phenolic resin in aqueous base to provide negative images even when no crosslinking is involved in the mechanism. The latent electrophiles selected are N-hydroxymethyl and N-aceotxymethylimides as well as high- boiling aldehydes. Our matrix resins are para-, meta-, and ortho-isomers of polyvinylphenol and copolymers of p-hydroxystyrene.
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Hiroshi Ito, Hiroshi Ito, Klaas Schildknegt, Klaas Schildknegt, Eugene A. Mash, Eugene A. Mash, } "Negative chemical amplification resist systems based on polyhydroxystyrenes and N-substituted imides or aldehydes", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46389; https://doi.org/10.1117/12.46389
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