1 June 1991 Novel quinonediazide-sensitized photoresist system for i-line and deep-UV lithography
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Abstract
this paper describes a novel resist material for i-line or deep uv lithography, consisting of imidazoylsulfonyl-naphthoquinonediazide (IPAC) and co(p-tert.-butylphenol-Bisphenol A)-formaldehyde resin (PBR). Along with the resist material comprising IPAC and PBR, another resist material of which matrix resin is substituted with a chemically modified polyvinylphonol (MPVP) is also presented. PBR and MPVP are considerably transparent at i-line and deep uv regions.
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Seiki Fukunaga, Tomoyuki Kitaori, Hiroo Koyanagi, Shin'ichi Umeda, Kohtaro Nagasawa, "Novel quinonediazide-sensitized photoresist system for i-line and deep-UV lithography", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46393; https://doi.org/10.1117/12.46393
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