1 June 1991 Novel surface imaging masking technique for high-aspect-ratio dry etching applications
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Abstract
G- and i-line diazonaphthoquinone/novolak photoresist films are surface imaged with g-line, i-line and deep-UV steppers. Following optical exposure, the resist film is treated with aqueous solutions which deposit a catalyst for electroless metal deposition. Wet development of the exposed and catalyzed photoresist results in selective removal of catalyst along with the exposed portion of the underlying photoresist. Upon immersion in an aqueous electroless plating solution, metal is selectively deposited on the unexposed photoresist which is still bearing catalyst to yield a positive-tone plasma etch mask. Oxygen magnetron-enhanced reactive ion etching (O2 MERIE) provides high polymer etch rates (approximately equals 1 micrometers /min) with excellent selectivity (> 300:1) to 70-170 angstrom Ni films. In addition, large ion fluxes produce highly anisotropic etch profiles for faithful pattern transfer. The process has achieved 0.30 micrometers resolution with a 6:1 aspect ratio at 248 nm (0.35 NA). Printing of 0.40 micrometers lines and spaces has been achieved at i-line (0.45 NA) over Al steps.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gary S. Calabrese, Livingstone N. Abali, John F. Bohland, Edward K. Pavelchek, Prasit Sricharoenchaikit, Gerald Vizvary, Stephen M. Bobbio, Patrick Smith, "Novel surface imaging masking technique for high-aspect-ratio dry etching applications", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46401; https://doi.org/10.1117/12.46401
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