Onium salt structure/property relationships in poly(4-tert-butyloxycarbonyloxystyrene) deep-UV resists

George Schwartzkopf; Nagla N. Niazy; Siddhartha Das; Geetha Surendran; John B. Covington

doi:10.1117/12.46356

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1 June 1991 Onium salt structure/property relationships in poly(4-tert-butyloxycarbonyloxystyrene) deep-UV resists

George Schwartzkopf, Nagla N. Niazy, Siddhartha Das, Geetha Surendran, John B. Covington

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Proceedings Volume 1466, Advances in Resist Technology and Processing VIII; (1991) https://doi.org/10.1117/12.46356
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

A series of sulfonium and iodonium salts was synthesized and the effect of onium slat structure on UV absorbance, thermal stability, and solubility in propylene glycol methyl ether acetate (PGMEA) was assessed. Several of these onium salts gave usable deep UV photoresists when combined with poly(4-tert-butyloxy-carbonloxystyrene). The lithographic sensitivity and latent image stability of these photoresists were strongly influenced by the structure of the incorporated onium salt.

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George Schwartzkopf, Nagla N. Niazy, Siddhartha Das, Geetha Surendran, and John B. Covington "Onium salt structure/property relationships in poly(4-tert-butyloxycarbonyloxystyrene) deep-UV resists", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46356

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