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1 June 1991 Polysilyne resists for 193 nm excimer laser lithography
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Abstract
Polyalkylsilynes have been used as resists for 193-nm projection lithography. These resists can be either wet developed using toluene or dry developed using HBr reactive ion etching (RIE). Wet development relies on crosslinking via intermolecular Si-O-Si bond formation to reduce solubility (negative tone) whereas the dry development relies on photo-oxidation to induce etch selectivity (also negative tone). The sensitivity in either case ranges from 20 to 200 mJ/cm2 and depends on the resist formulation. The best resist compositions are those that contain predominantly small (n-butyl) aliphatic pendant groups rather than large (cyclohexyl, phenyl) pendant groups. Using a 0.33 NA catadioptric lens with a phase mask, equal line-and-space features as small as 0.15 micrometers have been printed and transferred through 1.0 micrometers of planarizing layer (aspect ratio > 6) using oxygen RIE.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roderick R. Kunz, Patricia Anne Bianconi, Mark W. Horn, R. R. Paladugu, David C. Shaver, David Alastair M Smith, and Charles A. Freed "Polysilyne resists for 193 nm excimer laser lithography", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46373
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