Preliminary lithographic characteristics of an all-organic chemically amplified resist formulation for single-layer deep-UV lithography

Omkaram Nalamasu; Elsa Reichmanis; May Cheng; Victor Pol; Janet M. Kometani; Francis M. Houlihan; Thomas X. Neenan; M. P. Bohrer; David A. Mixon; Larry F. Thompson; Clifford H. Takemoto

doi:10.1117/12.46355

1 June 1991 Preliminary lithographic characteristics of an all-organic chemically amplified resist formulation for single-layer deep-UV lithography

Omkaram Nalamasu, Elsa Reichmanis, May Cheng, Victor Pol, Janet M. Kometani, Francis M. Houlihan, Thomas X. Neenan, M. P. Bohrer, David A. Mixon, Larry F. Thompson, Clifford H. Takemoto

Author Affiliations +

Proceedings Volume 1466, Advances in Resist Technology and Processing VIII; (1991) https://doi.org/10.1117/12.46355
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

When used in conjunction with a nitrobenzylester photoacid generator, poly(t-butoxycarbonyloxy-styrene-sulfone) deep-UV resist films exhibit high contrast, good resolution and linewidth stability. Use of overcoat materials dramatically reduce the surface inhibition problems, improve the latent image stability (time delay) and enhance the sensitivity by isolating the resist surface from environmental contaminants that react with the photogenerated acid. The photospeed of the all organic CAMP formulation is lower compared to the arsenate based system but can be improved by using more aggressive PEB conditions. Coded, 0.35 micrometers l/s pairs could be resolved in 1 micrometers thick resist films at a dose of 20-30 mJ/cm2. The exposure latitude is approximately equals 25% for 0.5 micrometers features, upon exposure with a GCA prototype deep-UV exposure tool with a NA equals 0.35 and 5x reduction optics. This paper will discuss the resolution, depth-of-focus, exposure latitude and processing characteristics obtained during the evaluation of this chemically amplified resist.

Citation Download Citation

Omkaram Nalamasu, Elsa Reichmanis, May Cheng, Victor Pol, Janet M. Kometani, Francis M. Houlihan, Thomas X. Neenan, M. P. Bohrer, David A. Mixon, Larry F. Thompson, and Clifford H. Takemoto "Preliminary lithographic characteristics of an all-organic chemically amplified resist formulation for single-layer deep-UV lithography", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46355

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available